Product Summary
The MRF904 is a RF & microwave discrete low power transistor designed primarily for use in High Gain, low noise general-purpose amplifiers.
Parametrics
MRF904 absolute maximum ratings: (1)VCEO Collector-Emitter Voltage: 15 Vdc; (2)VCBO Collector-Base Voltage: 25 Vdc; (3)VEBO Emitter-Base Voltage: 3.0 Vdc; (4)IC Collector Current: 30 mA.
Features
MRF904 features: (1)Silicon NPN, high Frequency, To-72 packaged, Transistor; (2)High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz; 7 dB (typ) @ f = 1 GHz; (3)Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz; (4)High FT - 4 GHz (typ) @ IC = 15 mAdc.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||||||||
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MRF904 |
TRANS NPN 15V 30MA TO-72 |
Data Sheet |
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MRF9045GNR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 45W 945MHZ LDMOS TO270N |
Data Sheet |
Negotiable |
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MRF9045LR1 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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MRF9045LR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 45W 945MHZ LDMOS NI360L |
Data Sheet |
Negotiable |
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MRF9045LSR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 45W 945MHZ LDMOS NI360S |
Data Sheet |
Negotiable |
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MRF9045LSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 45W RF PWR LDMOS NI360S |
Data Sheet |
Negotiable |
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MRF9045MBR1 |
Other |
Data Sheet |
Negotiable |
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MRF9045MR1 |
Other |
Data Sheet |
Negotiable |
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