(China (Mainland))
Product Summary
The SD1407 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. It utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability.
Parametrics
SD1407 absolute maximum ratings:(1)Collector-base voltage, VCBO: 65V; (2)Collector-emitter voltage, VCEO: 36V; (3)Emitter-base voltage, VEBO: 4.0V; (4)Device current, IC: 20A; (5)Power dissipation, PDISS: 270W; (6)Junction temperature, TJ: +200°C; (7)Storage temperature, TSTG: -65 to +150°C.
Features
SD1407 features: (1)30MHz; (2)28 VOLTS; (3)IMD -30dB; (4)COMMON EMITTER; (5)GOLD METALLIZATION; (6)POUT=125 W MIN. WITH 15dB GAIN.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SD1407 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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SD1407-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN 28.0V 30MHz |
Data Sheet |
Negotiable |
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