Product Summary

The TK15A60U is a field effect transistor Silicon N channel MOS type.

Parametrics

TK15A60U absolute maximum ratings: (1)Drain-source voltage VDSS: 600 V; (2)Gate-source voltage VGSS: ±30 V; (3)DC ID: 15A; (4)Drain current Pulse (t = 1 ms) IDP: 30A; (5)Drain power dissipation (Tc = 25℃) PD: 40 W; (6)Single pulse avalanche energy EAS: 81 mJ; (7)Avalanche current IAR: 15 A; (8)Repetitive avalanche energy EAR: 4 mJ; (9)Channel temperature Tch: 150℃; (10)Storage temperature range Tstg: -55 to 150℃.

Features

TK15A60U features: (1)Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.); (2)High forward transfer admittance: .Yfs. = 8.5 S (typ.); (3)Low leakage current: IDSS = 100μA (VDS = 600 V); (4)Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

TK15A60U package diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TK15A60U(Q)
TK15A60U(Q)
Toshiba
MOSFET MOSFET N-Ch 600V 15
Data Sheet
0-1: $1.69
1-10: $1.35
10-100: $1.04
100-250: $1.00
TK15A60U(Q,M)
TK15A60U(Q,M)

MOSFET N-CH 600V 15A TO-220SIS
Data Sheet
0-1: $2.11
1-10: $1.88
10-25: $1.69
25-100: $1.54
100-250: $1.39
250-500: $1.25
500-1000: $1.05
1000-2500: $1.00
TK15A60U(STA4,Q,M)
TK15A60U(STA4,Q,M)
Toshiba
MOSFET N-Ch FET 600V 15A 0.3Ohm 40W
Data Sheet
0-190: $1.91
190-250: $1.77
250-500: $1.49
500-1000: $1.27