Product Summary

The BLF574 is a 500W to 600W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. The applications of BLF574 include industrial, scientific and medical applications, broadcast transmitter applications.

Parametrics

BLF574 absolute maximum ratings: (1)VDS drain-source voltage: 110V; (2)VGS gate-source voltage: +11V; (3)ID drain current: 56A; (4)Tstg storage temperature: +150°C; (5)Tj junction temperature: 225°C.

Features

BLF574 features: (1)Typical CW performance at frequency of 225MHz, a supply voltage of 50V and an IDq of 1000mA: Average output power= 500W; Power gain= 26.5dB; Efficiency= 70%; (2)Easy power control; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation(10MHz to 500MHz); (8)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS).

Diagrams

BLF574 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF574
BLF574

NXP Semiconductors

Transistors RF MOSFET Power 500-600W, HF-500MHz

Data Sheet

Negotiable 
BLF574,112
BLF574,112

NXP Semiconductors

Transistors RF MOSFET Power Trans MOSFET N-CH 110V 42A 5-Pin

Data Sheet

0-1: $117.87
1-25: $108.11