Product Summary

The M29W320ET70N6E is a 32 Mbit (4Mb×8 or 2Mb×16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The M29W320ET70N6E has an extra 32 KWord (×16 mode) or 64 KByte (×8 mode) block, the Extended Block, that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. The M29W320ET70N6E is offered in TSOP48 (12×20mm), and TFBGA48 (6×8mm, 0.8mm pitch)packages.

Parametrics

M29W320ET70N6E absolute maximum ratings: (1)TBIAS Temperature Under Bias: -50℃ to 125℃; (2)TSTG Storage Temperature: -65℃ to 150℃; (3)TLEAD Lead Temperature during Soldering: 260℃; (4)VIO Input or Output Voltage: -0.6V to VCC +0.6 V; (5)VCC Supply Voltage: -0.6V to 4V ; (6)VID Identification Voltage: -0.6 to 13.5V; (7)VPP Program Voltage: -0.6 to 13.5V.

Features

M29W320ET70N6E features: (1)supply voltage: vcc = 2.7v to 3.6v for program, erase and read, vpp =12v for fast program (optional); (2)access times: 70, 90ns; (3)programming time: 10μs per byte/word typical, double word/ quadruple byte program; (4)memory blocks: memory array: 63 main blocks, 8 parameter blocks(top or bottom location); (5)erase suspend and resume modes: read and program another block during erase suspend; (6)unlock bypass program command:faster production/batch programming; (7)vpp/wp pin for fast program and write protect; (8)temporary block unprotection mode; (9)common flash interface:64 bit security code; (10)extended memory block:extra block used as security block or to store additional information; (11)low power consumption: standby and automatic standby.

Diagrams

M29W320ET70N6E pin configuration

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