Product Summary
The SI4425BDY-T1-E3 is a p-channel 30-v (d-s) mosfet.
Parametrics
SI4425BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: 20V; (3)Pulsed Drain Current IDM: -50A; (4)continuous Source Current (Diode Conduction)a IS: -2.1, -1.3A; (5)Continuous Drain Current (TJ = 150℃)a TA = 25℃ ID: -11.4, -8.8A; (6)Continuous Drain Current (TJ = 150℃)a TA = 70℃ ID: -9.1, -7.0A.
Features
SI4425BDY-T1-E3 features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process.
Diagrams

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![]() SI4425BDY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 11A 2.5W |
![]() Data Sheet |
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| Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() Si4401BDY |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SI4401BDY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 10.5A 0.014Ohm |
![]() Data Sheet |
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![]() |
![]() SI4401BDY-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
![]() Data Sheet |
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![]() |
![]() SI4401DY-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 10.5A 3W |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SI4401DY-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V |
![]() Data Sheet |
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![]() |
![]() Si4403BDY |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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(China (Mainland))










