(China (Mainland))
Product Summary
The TC55VCM216ASTN55 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. The TC55VCM216ASTN55 is automatically placed in low-power mode at 0.7 uA standby current (at VDD = 3 V, Ta = 25℃, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low.
Parametrics
TC55VCM216ASTN55 absolute maximum ratings: (1)Power Supply Voltage:-0.3 to 4.2V; (2)Input Voltage:-0.3 to 4.2V; (3)Input/Output Voltage:-0.5 to VDD + 0.5V; (4)Power Dissipation:0.6W; (5)Soldering Temperature (10s):260℃; (6)Storage Temperature:-55 to 150℃; (7)Operating Temperature:-40 to 85℃.
Features
TC55VCM216ASTN55 features: (1)Low-power dissipation: Operating: 9 mW/MHz (typical); (2)Single power supply voltage of 2.3 to 3.6 V; (3)Power down features usingCE1 and CE2; (4)Data retention supply voltage of 1.5 to 3.6 V; (5)Direct TTL compatibility for all inputs and outputs; (6)Wide operating temperature range of -40℃ to 85℃.
Diagrams
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Negotiable |
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