Product Summary
The TSD4M450V is an n-channel enhancement mode isofet power mos transistor module. Its applications include DC/DC & DC/AC converters, smps & ups, motor control, output stage for pwm, ultrasonic circuit.
Parametrics
TSD4M450V absolute maximum ratings: (1)VDS, Drain-source voltage: 100V; (2)VDGR, Drain-gate voltage: 100V; (3)VGS, Gate-source voltage: ±20V; (4)ID, drain current at Tc= 25℃: 135A; (5)ID, drain current at Tc= 100℃: 85A; (6)IDM, Drain current: 500A; (7)Ptot, Total dissipation at Tc=25℃: 500W; Derating factor: 4W/℃; (8)Tstg, Storage temperature: -55 to 150℃; (9)VISO, Insulation withstand voltage(AC-RMS): 2500V.
Features
TSD4M450V features: (1)High current power mos module; (2)Very low Rth junction to case; (3)Dual source contacts; (4)Very large soa- large peak power capability; (5)Isolated case; (6)Easy to mount; (7)Very low internal parasitic inductance; (8)Analanche ruggedness technology.
Diagrams
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![]() TSD400-49 |
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![]() TSD400-56 |
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![]() TSD400-69 |
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![]() TSD400-70 |
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![]() TSD400-71 |
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![]() TSD400-79 |
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