(China (Mainland))
Product Summary
The MJ16018 is a NPN silicon power transistor. It is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode applications. The applications of the MJ16018 include: Switching Regulators, Inverters, Solenoids, Relay Drivers, Motor Controls.
Parametrics
MJ16018 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO(sus): 800Vdc; (2)Collector-Emitter Voltage VCEV: 1500Vdc; (3)Emitter-Base Voltage VEB: 6Vdc; (4)Collector Current-Continuous IC: 10Adc; Peak ICM: 15Adc; (5)Base Current-Continuous IB: 8Adc; Peak IBM: 12Adc; (6)Total Power Dissipation @ TC = 25℃ PD: 175W; @ TC = 100℃: 100W; Derate above TC = 25℃: 1W/℃; (7)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to 200℃.
Features
MJ16018 features: (1)Collector-Emitter Voltage-VCEV = 1500 Vdc; (2)Fast Turn-off Times: 80 ns Inductive Fall Time-100℃ (Typ); 110 ns Inductive Crossover Time-100℃ (Typ); 4.5 μs Inductive Storage Time-100℃ (Typ); (3)100℃ Performance Specified for: Reverse-Biased SOA with Inductive Load; Switching Times with Inductive Loads; Saturation Voltages; Leakage Currents.
Diagrams
<P><IMG border=0 alt="MJ16018 marking diagram" src="http://www.seekic.com/uploadfile/ic-mfg/20126296167599.jpg"></P>
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 MJ16018 |
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Negotiable |
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MJ16002 |
Other |
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MJ16004 |
Other |
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MJ16006 |
Other |
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Negotiable |
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MJ16008 |
Other |
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Negotiable |
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MJ16010 |
Other |
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Negotiable |
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MJ16012 |
Other |
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Negotiable |
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