S29GL064N90TFI040H

Product Summary

The S29GL064N90TFI040H is a 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N90TFI040H is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the device has 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL064N90TFI040H can be programmed either in the host system or in standard EPROM programmers.

Parametrics

S29GL064N90TFI040H absolute maximum ratings: (1)Storage Temperature, Plastic Packages:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–65℃ to +125℃; (3)Voltage with Respect to Ground:VCC:–0.5 V to +4.0 V, A9, OE#, ACC and RESET#:–0.5 V to +12.5 V, All other pins:–0.5 V to VCC+0.5 V; (4)Output Short Circuit Current: 200 mA.

Features

S29GL064N90TFI040H features: (1)Single power supply operation; (2)Manufactured on 110 nm MirrorBit process technology; (3)Secured Silicon Sector region; (4)128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence; (5)Programmed and locked at the factory or by the customer; (6)64Mb (uniform sector models): One hundred twenty-eight 32 Kword (64 KB) sectors; (7)64 Mb (boot sector models): One hundred twenty-seven 32 Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors; (8)32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors; (9)32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors; (10)Enhanced VersatileI/O Control:All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC; (11)Compatibility with JEDEC standards: Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection; (12)100,000 erase cycles typical per sector; (13)20-year data retention typical.

Diagrams